InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 1C with arsenic (As) and phosphorus (P) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 71. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 1C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126meV has been observed from the P-implanted sample, whilst only 14meV has been measured from the SixNy-capped sample after annealing at 750 1C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed. r 2005 Elsevier B.V. All rights reserved. PACS: 52.40.Hf; 61.72.Ji; 78.55.Cr; 81.07.St